Oxide Ionic Neuro-Transistors for Bio-inspired Computing

神经形态工程学 晶体管 计算机科学 冯·诺依曼建筑 仿真 纳米技术 DNA运算 材料科学 氧化物 人工神经网络 计算机体系结构 人工智能 电气工程 电压 计算 工程类 算法 操作系统 经济 经济增长 冶金
作者
Yongli He,Yixin Zhu,Qing Wan
出处
期刊:Nanomaterials [Multidisciplinary Digital Publishing Institute]
卷期号:14 (7): 584-584 被引量:4
标识
DOI:10.3390/nano14070584
摘要

Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions.
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