材料科学
电阻随机存取存储器
X射线光电子能谱
退火(玻璃)
透射电子显微镜
原子层沉积
光电子学
纳米颗粒
电阻式触摸屏
纳米技术
氧气
分析化学(期刊)
化学工程
电极
薄膜
复合材料
物理化学
有机化学
工程类
化学
电气工程
色谱法
作者
Jun-Ho Byun,Woon-San Ko,Ki Nam Kim,Do-Yeon Lee,So-Yeon Kwon,Hi Deok Lee,Ga Won Lee
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2023-07-14
卷期号:34 (39): 395203-395203
被引量:1
标识
DOI:10.1088/1361-6528/ace057
摘要
Abstract In this study, resistive random-access memory (ReRAM) devices with ZnO nanoparticles (NPs) are suggested to enhance performance and reduce variation in device switching parameters. The ZnO NPs are formed by annealing ZnO prepared via atomic layer deposition on HfO 2 , which is verified using transmission electron microscopy, x-ray diffraction pattern, and atomic force microscopy. The depth profile analysis of x-ray photoelectron spectroscopy shows that oxygen diffuses from HfO 2 to ZnO NPs during annealing. This can be explained by the calculation results using density functional theory (DFT) where the formation energy of oxygen vacancies is reduced at the interface of ZnO NPs and HfO 2 compared to single HfO 2 . The fabricated ZnO NPs ReRAM demonstrates reduced forming voltage, stable resistive switching behavior, and improved cycle-to-cycle uniformity in a high-resistance state.
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