Temperature‐Induced Changes in Multifin‐Schottky Barrier FinFETs: An Analog/RF Linearity Investigation

Abstract In this script, a Gallium Nitride (GaN)‐based FinFET structure is proposed with a multi‐channel device that is designed and simulated. Here, the 3D‐Sentaures TCAD simulator is used to investigate the analog/radio frequency performance and linearity of the MultiFin‐Schottky Barrier FinFET with different temperatures of 100–400 K. The proposed device underwent a temperature analysis, where critical parameters include drain current, I ON /I OFF ratio, Transconductance (g m ), higher‐order terms (g m2 and g m3 ), Gain Bandwidth Product (GBP), Cut‐off Frequency (f T ), Transit Time (τ), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), Voltage Input Intercept Point (VIP 2 , VIP 3 ), Input Intercept Point (IIP 3 ), and Third Order Intermodulation Distortion (IMD 3 ) is thoroughly examined. Thus, the proposed GaN‐based FinFET validates as a strong potential contender for GaN‐based analog/RF applications.