Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs

We present a novel charge-based compact model for drain current in fin-shaped GaN high-electron-mobility transistors (Fin-HEMTs). A positive threshold voltage shift is observed in Fin-HEMTs due to better gate control of the channel. The combined effect of top and side gates on the channel charge density is studied with the help of detailed TCAD simulation. For the first time, a closed-form expression for 2-D electron gas (2-DEG) density in Fin-HEMTs is derived. The fin width dependence of the 2-DEG current is modeled in a unique way by considering the modified gate capacitance and threshold voltage in Fin-HEMTs. The total drain current is modeled as the sum of 2-DEG and double-gate field effect transistor (FET) currents. In addition, the total gate capacitance including the side-gate capacitance for fin structure is also formulated. The model is generic and can be used for different fin geometries using the proposed equivalent circuits as demonstrated. A fin-width-dependent thermal resistance model is proposed and included in the drain current model using a thermal subcircuit. The proposed model is completely analytical and does not require any iteration or fitting parameters in contrast to the available models discussed in the literature. Our model shows excellent agreement with the state-of-the-art experimental data.