凝聚态物理
超导电性
电荷密度波
拓扑绝缘体
物理
量子相变
材料科学
相变
作者
Guolin Zheng,Cheng Tan,Zheng Chen,Maoyuan Wang,Xiangde Zhu,Sultan Albarakati,Meri Algarni,J. G. Partridge,Lawrence Farrar,Jianhui Zhou,Wei Ning,Mingliang Tian,Michael S. Fuhrer,Lan Wang
标识
DOI:10.1038/s41467-023-36208-6
摘要
Abstract The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV 3 Sb 5 (A = K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that electrically controlled proton intercalation has significant impacts on striking quantum phenomena in CsV 3 Sb 5 nanodevices mainly through inducing disorders in thinner nanoflakes and carrier density modulation in thicker ones. Specifically, in disordered thin nanoflakes (below 25 nm), we achieve a quantum phase transition from a superconductor to a “failed insulator” with a large saturated sheet resistance for T → 0 K. Meanwhile, the carrier density modulation in thicker nanoflakes shifts the Fermi level across the charge density wave (CDW) gap and gives rise to an extrinsic-intrinsic transition of AHE. With the first-principles calculations, the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities would account for the giant AHE. Our work uncovers a distinct disorder-driven bosonic superconductor-insulator transition (SIT), outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV 3 Sb 5 family.
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