Magnetoresistance in 2D Magnetic Materials: From Fundamentals to Applications

Abstract Magnetoresistance effects, such as tunnel magnetoresistance and giant magnetoresistance, play pivotal roles in spintronics, where the coupling between spin and current affects the electrical resistance. These effects are fundamental for various applications, including high‐density information storage, signal transmission, and processing. With the growing demand for magnetoresistance‐based modern devices in the post‐Moore era, researchers are now focusing on developing such devices using 2D magnetic materials. These materials offer several advantages, including a unique layered structure, high integration density, tunable room‐temperature ferromagnetism, and intriguing magnetoresistive properties. This review starts with a brief introduction to 2D magnetic materials and their typical synthesis routes, followed by a preview of some classifications of magnetic materials. In particular, different magnetoresistance effects in 2D magnetic materials and their unique applications in spintronics are critically discussed. Finally, current challenges and prospects of this emerging field are suggested. This work highlights the importance of the pivotal magnetoresistance effect in advancing modern technology, offering vital applications in many fields ranging from magnetic memory to neuromorphic computing.