A new strategy of tuning the scattering mechanism to decouple electric conductivity with Seebeck coefficient for high-performance thermoelectrics is realized by Jing Wu, Junpeng Lu, Zhenhua Ni, and co-workers, as described in article number 2004786. By applying a gate voltage on a 2D Bi2O2Se-based field-effect transistor, a high thermoelectric power factor over a wide temperature range is achieved due to persistently high mobility arising from the highly gate-tunable scattering mechanism.