佩多:嘘
材料科学
纳米片
退火(玻璃)
能量转换效率
工作职能
热稳定性
化学工程
聚合物太阳能电池
光电子学
电子迁移率
剥脱关节
聚合物
纳米技术
图层(电子)
复合材料
石墨烯
工程类
作者
Jianming Wang,Huangzhong Yu,Chun‐Li Hou,Jiang Zhang
出处
期刊:Solar RRL
[Wiley]
日期:2019-11-14
卷期号:4 (3)
被引量:33
标识
DOI:10.1002/solr.201900428
摘要
Herein, a 2D α‐In 2 Se 3 nanosheet, a binary III–VI group compound semiconductor, is fabricated by liquid‐phase exfoliation method, and the photoelectric properties of α‐In 2 Se 3 material are investigated in depth. It is found that α‐In 2 Se 3 film exhibits significant conductivity, outstanding optical transmission, and a suitable work function. Combined with its smooth surface and preferable hydrophobicity, α‐In 2 Se 3 film can efficiently facilitate hole transporting in the polymer solar cells (PSCs). Due to the aforesaid advantages, a 2D α‐In 2 Se 3 nanosheet is used as a hole transport layer (HTL) in conventional PSCs for the first time, and a relatively high power conversion efficiency (PCE) of 9.58% is achieved with the structure of ITO/α‐In 2 Se 3 /PBDB‐T:ITIC/Ca/Al, which is comparable with poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)‐based devices (9.50%). Interestingly, it is demonstrated that the α‐In 2 Se 3 film possesses excellent thermal stability in the range from room temperature to 280 °C, and a PCE of 9.35% is achieved without annealing treatment of α‐In 2 Se 3 film, which exhibits a great potential of α‐In 2 Se 3 for an annealing‐free approach. Furthermore, the incorporation of α‐In 2 Se 3 HTL also remarkably enhances the long‐term stability of PSCs compared with PEDOT:PSS‐based devices. So, the results show that 2D α‐In 2 Se 3 is a promising candidate to be an efficient and stable hole‐extraction layer.
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