二次离子质谱法
材料科学
分辨率(逻辑)
分析化学(期刊)
化学
高分辨率
溅射
作者
Yuriy Kudriavtsev,A. G. Hernandez,Rene Asomoza,S. Gallardo,M. Lopez,K. Moiseev
摘要
We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero-structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to −150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra-low-energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.
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