过电压
材料科学
电压
激光器
温度测量
光电子学
电子工程
电气工程
光学
工程类
物理
量子力学
作者
paul Hubert P. Llamcra,Camille Joyce G. Garcia-Awitan,Kathlyn Kaye P. Domantay
标识
DOI:10.1109/ipfa.2018.8452502
摘要
One of the recent challenges in the field of failure analysis is the fault isolation of devices which only fail on specified region of temperature, frequency, and voltage. Soft defect localization is used for the fault isolation of such cases. In this paper, the Dynamic Analysis by Laser Stimulation (DALS) of Hamamatsu iPhemos was utilized to pinpoint the location of the physical defect of a dual overvoltage/ undervoltage comparator device that fails at hot temperature but passes at room and cold temperatures. Results revealed that DALS was able to successfully localize the failure site and component compared to the more commonly used Photo Emission Microscopy (PEM) technique.
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