材料科学
带宽(计算)
铌酸锂
光电子学
宽带
光调制器
宽带
共面波导
电吸收调制器
调幅
微波食品加热
炸薯条
频率调制
调制(音乐)
光学
光纤
电子工程
倒装芯片
电光调制器
电阻抗
脉冲幅度调制
频率响应
脉冲宽度调制
电气工程
数据传输
同轴
相位调制
插入损耗
带状线
波导管
光通信
同轴电缆
单片微波集成电路
作者
Yutong He,Hao Liu,Changzheng Sun,Bing Xiong,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo
标识
DOI:10.1109/jlt.2025.3609784
摘要
Wideband electro-optic modulators are key components in high-speed data transmission systems. Microwave resonances induced by packaging-related parasitic modes can significantly degrade the bandwidth performance of modulator modules. In this work, we present a high-performance thin-film lithium niobate (TFLN) modulator module featuring a 1.0-mm coaxial connector. The module contains a TFLN modulator chip employing low-k underfill to exhibit an ultra-wide bandwidth exceeding 110 GHz. A series of parasitic-mode suppression strategies are incorporated to ensure resonance-free frequency response for the packaged module, including inner slow-wave electrodes for flexible microwave input layout, a quartz-based grounded coplanar waveguide (GCPW) feedline with metal vias, a parasitic mode suppressor micromachined into the Kovar housing, and short-circuit bonding wires. The packaged modulator module exhibits a flat frequency response with an electro-optic bandwidth of 100 GHz, and supports high-speed data transmission of 130 Gbaud eight-level pulse amplitude modulation (PAM8) over 500 m of standard single-mode fiber in the O-band, corresponding to a maximum data rate of 390 Gbps. This demonstration validates the potential of our module for ultra-high-speed optical communications.
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