Pressure induced structural phase transition inAgSbTe2

We report a novel high pressure structural sequence for the functionally\ngraded thermoelectric, narrow band gap semiconductor AgSbTe$_{2}$, using angle\ndispersive x-ray diffraction in a diamond anvil cell with synchrotron radiation\nat room temperature. The compound undergoes a B1 to B2 transition; the\ntransition proceeds through an intermediate amorphous phase found between 17-26\nGPa that is quenchable down to ambient conditions. The pressure induced\nstructural transition observed in this compound is the first of its type\nreported in this ternary cubic family, and it is new for the B1-B2 transition\npathway reported to date. Density Functional Theory (DFT) calculations\nperformed for the B1 and B2 phases are in good agreement with the experimental\nresults.\n