活动层
薄膜晶体管
材料科学
晶体管
光电子学
图层(电子)
薄膜
并五苯
聚合物
有机半导体
电极
基质(水族馆)
工程物理
复合材料
纳米技术
电气工程
工程类
电压
作者
L. Resendiz,Magali Estrada,Antonio Cerdeira,Benjamin Iniguez,M.J. Deen
标识
DOI:10.1016/j.orgel.2010.09.002
摘要
Abstract In this paper, we analyze the variation of the threshold voltage V T and carrier mobility μ fet with the active layer thickness of polymer thin film transistors (PTFTs). The value of V T was observed to become more negative as the active layer thickness decrease, while mobility slightly increased. Simulations obtained for different active layer thickness were first validated with experimental data from measured devices with known active layer thickness. Then using the calibrated simulator, it was found that as the semiconductor thickness decreased, the charge per square units in the active layer changes, establishing the cause of both of these behaviors.
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