钨
杂质
掺杂剂
X射线光电子能谱
金属
兴奋剂
电子
态密度
材料科学
电子密度
导带
化学
分析化学(期刊)
凝聚态物理
物理
核磁共振
冶金
有机化学
量子力学
色谱法
作者
R. Gehlig,Ekhard K. H. Salje,Albert Frederick Carley,M. W. Roberts
标识
DOI:10.1016/s0022-4596(83)80009-7
摘要
The excess electrons in reduced tungsten oxides appear in the X-ray induced photoelectron spectrum of WO2.90 as W5+ signals. The ratio of the integrated intensities of the W5+4f and W6+4f peaks vary with chemical composition. A further increase in the W5+4f density of states appears for the doped crystals in proportion to the density of dopants. In WO2.72 the charge carriers produce fivevalent tungsten only fractionally, the remaining electrons filling up the conduction band. A structural interpretation is proposed. The introduction of metallic impurities of V, Ni, and Nb increases the density of the fivevalent states.
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