期刊:CrystEngComm [Royal Society of Chemistry] 日期:2012-01-01卷期号:14 (22): 7590-7590被引量:18
标识
DOI:10.1039/c2ce25795e
摘要
We demonstrate a general approach for growing selectively semiconductor nanocrystals onto the edges of elongated Cd–chalcogenide nanostructures. Our approach utilizes the thermal decomposition of metal bisdiethyldithiocarbamate precursors to achieve selective growth onto cadmium chalcogenide nanostructures.