纳米线
材料科学
光致发光
纳米结构
纳米晶
纳米技术
扫描电子显微镜
透射电子显微镜
热液循环
化学工程
半导体
表征(材料科学)
试剂
纳米材料
光谱学
光电子学
物理化学
复合材料
工程类
物理
化学
量子力学
作者
Zhiqiang Lai,Yanjie Guo,Peihui Yang
出处
期刊:NANO
[World Scientific]
日期:2016-12-01
卷期号:11 (12): 1650140-1650140
被引量:3
标识
DOI:10.1142/s179329201650140x
摘要
As a IV–VI semiconductor, GeS is winning wide attention for its excellent properties. However, few examples of GeS nanostructures, especially those with photoluminescence (PL) properties, have been reported. After the optimization of reaction conditions, including time and temperature, the GeS nanowires with PL properties are synthesized a green, facile hydrothermal route without using any toxic reagent. These materials are characterized by transmission and scanning electron microscopy (TEM and SEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), etc. With the average diameter of [Formula: see text]200[Formula: see text]nm and the length ranging from 1–25[Formula: see text][Formula: see text]m, the resulting GeS nanowires have relatively smooth surface and round top, and are oriented along [100] facet. The growth mechanism of GeS nanowires is investigated, and the understanding of their growth mechanism could provide helpful guidance for designing experimental conditions rationally to synthesize nanowires. Due to their special nanostructure, these nanowires possess very good fluorescent properties, which indicates that these nanowires have potential to apply in future optical nanodevices.
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