Optimization of etching power for surface-modified diamond films based on inductively coupled oxygen plasma

In this paper,the etching of diamond film is done by inductively coupled oxygen plasma to explore the treatment and modification methods for the diamond film surface.Based on the analysis with different etching rates under different inductively coupled plasma(ICP) RF source power values and bias RF source power values,the etching mechanism is explored.And the relative contents of sp2 and sp3 were characterized by Raman spectra.Etching results show that part of the sp3 bonds change into sp2 bonds during the etching process of diamond films by inductively coupled oxygen plasma,and the surface roughness is reduced after etching.When the diamond films are etched under high power,both sp2 and sp3 bonds are etched,and the etching rate of sp2 bonds is higher than that of the sp3 bonds.Finally the ICP power was optimized based on etching experiments and possible mechanism.