单独一对
扭转
八面体
材料科学
失真(音乐)
结晶学
凝聚态物理
卤化物
格子(音乐)
物理
晶体结构
化学
无机化学
分子
量子力学
几何学
放大器
数学
光电子学
CMOS芯片
声学
作者
Santosh Kumar Radha,Churna Bhandari,Walter R. L. Lambrecht
标识
DOI:10.1103/physrevmaterials.2.063605
摘要
Using first-principles calculations, we show that $\mathrm{Cs}B{X}_{3}$ halides with $B=\text{Sn}$ or Pb undergo octahedral rotation distortions, while for $B=\text{Ge}$ and Si, they undergo a ferroelectric rhombohedral distortion accompanied by a rhombohedral stretching of the lattice. We show that these are mutually exclusive at their equilibrium volume although different distortions may occur as functions of lattice expansion. The choice between the two distortion modes is in part governed by the Goldschmidt tolerance factor. However, another factor explaining the difference between Sn and Pb compared with Ge and Si is the stronger lone-pair character of Ge and Si when forced to be divalent as is the case in these structures. The lone-pair chemistry is related to the off centering. While the Si-based compounds have not yet been synthesized, the Ge compounds have been established experimentally. As a final test of the importance of the tolerance factor we consider $\mathrm{RbGe}{X}_{3}$, which has smaller tolerance factor than the corresponding $\mathrm{CsGe}{X}_{3}$ because Rb is smaller than Cs. We find that it can lower its energy by both rotations or rhombohedral off-centering distortions but the latter lower the energy slightly more efficiently.
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