光电探测器
材料科学
光电流
宽带
响应度
红外线的
光电子学
光学
异质结
二极管
带隙
纳米片
激光器
可见光谱
纳米技术
物理
作者
Jihua Zou,Yizhen Ke,Xiangyu Zhou,Yixuan Huang,Wen Du,Lin Lin,Shunyong Wei,Lingzhi Luo,Hezhuang Liu,Chuanlin Li,Kai Shen,Aobo Ren,Jiang Wu
标识
DOI:10.1002/adom.202200143
摘要
Abstract P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In 2 Se 3 (direct bandgap) on a p‐type ultra‐thin WSe 2 nanosheet. The vdWs stacked photodetector with an improved type‐II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode‐like behavior. This behavior is further confirmed by the high‐resolution scanning photocurrent mapping. As a result, the as‐fabricated device exhibits a short response time (<120 µs) and a high responsivity of 1.84 A W −1 under 520 nm laser illumination. Accordingly, an underwater optical communication system based on the WSe 2 /α‐In 2 Se 3 p‐n heterojunction photodetector is demonstrated, which is promising for next‐generation high‐performance and low‐power detection applications.
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