逻辑电平
CMOS芯片
电压
测距
电气工程
能量(信号处理)
电子工程
传播延迟
功率(物理)
计算机科学
电路设计
工程类
低功耗电子学
逻辑门
电子线路
集成电路
物理
阈值电压
材料科学
集成电路设计
作者
Amir Aghajani,Mohammad Makhdoumi Akram,Reza Bostani,Ahmad Kamal Hassan,Benoit Gosselin
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2026-02-25
卷期号:73 (4): 393-397
标识
DOI:10.1109/tcsii.2026.3667894
摘要
This paper presents a new high-speed, low-power level shifter circuit capable of converting low-voltage input pulses to high-voltage output pulses with minimal propagation delay and dynamic power consumption. The proposed architecture leverages fast feed-forward, charging and discharging paths to enhance speed and energy efficiency, making it suitable for high-performance and high-speed applications such as system-on-chip (SoCs), high-speed memories, and FPGAs. Implemented in 130 nm TSMC CMOS technology, the circuit supports input voltages ranging from 200 mV to 0.8 V and converts them to a 1.2 V output. It achieves propagation delays of 1.19 ns and 0.34 ns for input voltages of 0.3 V and 0.4 V, respectively. The level shifter exhibits low energy consumption, with average energy per transition measured at 16.22 fJ and 14.92 fJ for 0.3 V and 0.4 V inputs, respectively. The total silicon area of the circuit is 49.4 μm². We show that the presented design outperforms recent solutions.
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