Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

The effect of substitutional cation doping in the A-site of the nanoscale APbI 3 perovskite layer has been systematically investigated to achieve improvements in the charge-carrier dynamics and endurance of non-volatile bipolar (NVB) memory devices.