Scalable Dielectrics Technology for 2D Materials Electronics

Abstract The integration of dielectrics with two‐dimensional (2D) materials by scalable approaches represents a key requirement and one of the open challenges for the future industrialization of 2D‐based electronics. This paper provides an overview of the role played by dielectrics in different graphene‐ and 2D semiconductors‐based architectures, including 2D materials encapsulation, recently demonstrated ultra‐scaled and three‐dimensional (3D) stacked 2D‐Field Effect Transistors (FETs) for post‐silicon logic application, and tunnel transistors targeting ultra‐high frequency (THz) operation. Furthermore, different classes of dielectrics suitable for the integration with 2D materials have been reviewed, including layered dielectrics (such as h‐BN) and non‐layered ionic crystals (such as CaF 2 ) with van der Waals interface on 2D materials, and high‐k insulators deposited by atomic layer deposition (ALD). The advantages and disadvantages of each kind of dielectric in terms of permittivity, breakdown field, interface quality with 2D materials, as well as scalability of the integration approaches have been benchmarked. A special focus will be given on ALD, which still represents the only industrially compatible approach enabling scalable integration of high‐k insulators. Currently available approaches to promote uniform ALD growth on the inherently inert surface of 2D materials have been extensively discussed, highlighting new trends and perspectives in this field.