Intrinsic MRAM Properties Enable Security Circuits

The intrinsic behaviors of spin-transfer-torque magnetoresistive random access memory (STT-MRAM) are exploited to implement a true random number generator (TRNG) and physical unclonable function (PUF). High-entropy TRNGs have attracted great interest in stochastic computing and reliable PUFs can prevent access to neural network model weights for in-memory computing. In this survey, We resort to MRAM security circuits implementation with a twofold aim: 1) Refine MRAM-based TRNG and PUF design methods. 2) Introduce a linear correction code to equalize throughput and randomness in TRNG.