材料科学
热电效应
热电材料
亚稳态
相(物质)
单相
热导率
纳米技术
灵活性(工程)
工程物理
光电子学
复合材料
电气工程
热力学
量子力学
统计
物理
工程类
有机化学
化学
数学
作者
Xingkun Ning,Yongmao Ran,Jiaying Han,Shufang Wang
标识
DOI:10.1002/adfm.202518193
摘要
Abstract Despite SnSe's high thermoelectric performance, its application in flexible devices is limited by a negligible room‐temperature power factor ( PF ) and poor flexibility from inherent rigidity. Here, first‐principles calculations of Gibbs free energy and phonon spectra for SnSe phases revealed that metastable F m3m‐SnSe exhibits relative stability. Freestanding single‐crystalline metastable F m3m‐SnSe membranes are then fabricated. These membranes exhibit a remarkable room‐temperature PF of 2.39 µW cm −1 K −2 , nearly two orders of magnitude higher than that of stable P nma‐phase SnSe films (0.03 µW cm −1 K −2 ). Notably, the freestanding F m3m‐SnSe membranes demonstrate exceptional mechanical robustness: they spontaneously curl into tubular architectures and retain over 80% of their electrical conductivity after 200 bending cycles (bending radius: 12 mm). Microstructural analyses confirm polycrystalline P nma‐SnSe films suffer from grain boundary cracking under bending due to stress concentration, but single‐crystal F m3m‐SnSe membranes—without grain boundaries to concentrate stress—exhibit better flexibility and resistance to cracking. This work establishes freestanding single‐crystalline metastable F m3m‐SnSe as a highly efficient and flexible thermoelectric material and provides a fundamental strategy for designing room‐temperature SnSe‐based self‐powered flexible electronics.
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