卤化物
钙钛矿(结构)
金属
材料科学
离子
无机化学
化学工程
化学
冶金
结晶学
工程类
有机化学
作者
Jinbao Han,Shengjian Qin,Huan Liu,Menghan Chen,Zixuan Shang,Bozhi Tian,Zishang Liang,Mengxi Lv,Yanli Zeng,Jinjin Zhao
标识
DOI:10.1021/acs.jpclett.5c02483
摘要
Ion migration in CsPbBr3 perovskites, crucial for device stability and performance, is investigated under combined illumination and direct current (DC) or alternating current (AC) bias using macroelectrical and nanoscale microscopy. DC measurements demonstrate that illumination suppresses bias-induced ion migration, reducing the current drop amplitude (ΔI/I) from 60.68% (dark) to 18.19% (3.80 mW/cm2), attributed to photogenerated carrier passivating vacancies. Photocurrent atomic force microscopy reveals grain boundaries as preferential migration pathways under light, exhibiting 9.6-fold higher mechanical work dissipation than grains. Under AC bias, illumination enhances polarization, evidenced by an +8° out-of-plane phase shift in piezoresponse force microscopy, and increases surface potential (Kelvin probe force microscopy: 2.35 V dark to 3.27 V), confirming light-promoted ion migration via polarization modulation. These findings elucidate the mechanism of light-regulated ion migration in CsPbBr3, facilitating optimization of the perovskite device stability and performance.
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