High performance PIN Ge photodetector and Si optical modulator with MOS junction for photonics-electronics convergence system

We report on a high speed silicon-waveguide-integrated PIN Ge photodetector of 45 GHz bandwidth, and a high efficiency of 0.3 V·cm silicon optical modulator with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and high conductivity poly-silicon gate. These OE/EO devices enable low drive voltage of around 1V, which would contribute to a high density optical interposer of the future photonics-electronics convergence system.