GaN Doherty high power amplifiers at 900 MHz, 2.1 GHz, and 2.6 GHz

The performance of several Doherty power amplifiers (DPA) is presented. The power amplifiers make use of new input-prematched transistors based on GaN HFETs fabricated with RFMD's GaN1C process technology. The DPAs operate in several frequency bands including 860–900 MHz, 2.1–2.17 GHz, and 2.5–2.7 GHz. The DPAs were characterized with a 3GPP W-CDMA signal with 7.5 dB PAR. At 875–890 MHz, a DPA achieves 58.0 dBm peak saturated power, while showing 50.4% drain efficiency and −50 dBc ACPR at 50.3 dBm average power. At 2.14 GHz, a DPA achieves greater than 56.7 dBm peak saturated power, while showing 48% drain efficiency and −55 dBc ACPR at 49.1 dBm average power. At 2.6 GHz, a DPA achieves greater than 52.8 dBm peak saturated power, while showing 47.5% drain efficiency and −50 dBc ACPR at 45 dBm average power.