Simulated I-V characteristics of the race-track-shaped field emitter structures with small spacing between the emitter and the gate

In this paper, the race-track-shaped field emitter structures with small spacing between the emitter and the gate are proposed. The iterative finite difference in the coarse and fine meshing areas and the fourth order Runge-Kutta method are used to calculate the electric field and the electron trajectories in the race-track-shaped field emitter structures. Numerical results show that the turn-on voltages of these structures with 0.25 /spl mu/m and 0.1 /spl mu/m spacing between the emitter and the gate are 100 V and 60 V respectively.