Characterization Of Gallium Oxide With A Novel Non-Contact Electrical Metrology, CnCV, For Wide Bandgap Semiconductors

Cost savings and short feedback time are significant advantages of the corona non-contact capacitance voltage (CnCV) technique, recently introduced for wide bandgap SiC, GaN, and AlGaN/GaN as a replacement for C-V measurements on fabricated electrical test structures. The goal of this work is to verify the basic applicability and effectiveness of CnCV in characterization of Ga 2 O 3 . The results demonstrate excellent measurement conditions on Ga 2 O 3 epitaxial and bulk grown wafers, enabling the determination of important electrical properties such as the dopant concentration profile, initial surface charge, electron affinity and depletion current.