材料科学
晶界
光致发光
电介质
变阻器
陶瓷
兴奋剂
微观结构
复合材料
光电子学
电压
电气工程
工程类
作者
Haibo Yu,Yuying Zhang,Xiaolin Zhang,Da Wang,Ruiqing Chu,Zhijun Xu
标识
DOI:10.1016/j.ceramint.2022.04.334
摘要
CaCu3Ti4O12-xwt%BiSbO4 ceramics (CCTO-xwt%BSO, x = 0, 1, 2, 3) were prepared by solid-state reaction method. The microstructure, dielectric properties, varistor properties, photoluminescence properties of CCTO-xwt%BSO ceramics were studied in this work. Results showed that all samples formed CaCu3Ti4O12 (CCTO) single phase. Doping BiSbO4 (BSO) restrained the abnormal grain growth and increased the grain boundary density of ceramics. The introduction of BSO led to the increase of the grain boundary resistance, reducing the dielectric loss and enhancing the temperature stability of dielectric properties. The nonlinear electrical characteristics are enhanced with proper concentration of BSO. And the improved varistor performance with breakdown electric field of ∼3.98–34.6 and nonlinear coefficient of ∼1.49–2.96 are obtained for CCTO-xwt%BSO samples. In addition, the photoluminescent emission of the samples is enhanced with the addition of appropriate equivalent BSO, showing the potential applications in novel devices with photoluminescent/electrical multifunctional properties.
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