Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters

The dilute-As InGaNAs-based quantum well (QW) active region and the corresponding large-overlap design is analyzed by using a self-consistent 6-band k p method. Our study evaluates the optical transition energy, ground state electron-hole wavefunction overlap, and optical gain characteristics of a dilute-As InGaNAs QW consisting of a 3.3 nm thick In0.19Ga0.81N0.94As0.06 well and 10 nm thick GaN barriers. The calculation suggests that the In0.19Ga0.81N0.94As0.06 QW may result in a transition wavelength and optical gain comparable to a conventional 3.3 nm thick In0.35Ga0.65N QW, while preserving low In-content (19%). In addition, a staggered dilute-As InGaNAs QW design with a modulated As-doping profile in the InGaNAs QW is presented, and the calculation results in a significantly enhanced wavefunction overlap and optical gain. This study reveals the excellent potential of the dilute-As InGaNAs semiconductor for application as a high efficiency active region material for future long wavelength emitters. © 1965-2012 IEEE.