Does an intrinsic strain contribute to the effect of quantum confinement phenomenon? An alloyed transition metal dichalcogenide series, Mo(S1−xSex)2 as a case study

We show that the lattice strain in 2D semiconductors contributes to the effect of quantum confinement phenomenon. Scanning tunneling spectroscopy in Mo(S 1− x Se x ) 2 nanoflakes evidences that the bandgap versus layer number depends on the strain.