相变存储器
材料科学
焦耳加热
无定形固体
电阻和电导
相变
凝聚态物理
拉曼光谱
光电子学
纳米技术
化学物理
化学
结晶学
复合材料
光学
物理
图层(电子)
作者
Zhe Yang,Dayou Zhang,Jingwei Cai,Chuantao Gong,Qingping He,Ming Xu,Hao Tong,Xiangshui Miao
摘要
Phase change memory (PCM) is considered as a leading candidate for next generation data storage as well as emerging computing device, but the advancement has been hampered by high switching energy due to the melting process and amorphous relaxation induced large resistance drift. Polymorphic crystal-crystal transition without amorphization in metal dichalcogenides (TMDs) could be employed to solve these issues. Yet, the mechanism is still controversy. A melting-free PCM made of two dimensional (2D) MoTe2, which exhibits unipolar resistive switching (RS) and multi-level states with substantially reduced resistance drift via joule heating, is reported in this work. The device is first prepared based on the temperature dependence of Raman spectrum and electrical transport investigations on MoTe2 films. Significantly improved device performances on energy efficiency, switching speed, and memory window are further achieved by electrode size scaling down, indicating the key role of localized heating. Then, device scale transmission electron microscopy images reveal that the resistive switching stems from the transition between semiconducting 2H phase and metallic 1T′ phase. An entropy induced Te vacancies model is proposed to explain the reversible phase change mechanism in the MoTe2 based device. This study paves the way for further development of PCM based on atomically thin 2D TMDs, aiming for high density storage-class memory and high-precision neuromorphic computing.
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