Chemical and Electronic Structure at the Interface between a Sputter‐Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se)2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter‐deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin‐film solar cells is investigated with X‐ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X‐ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk‐sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface‐ and bulk‐sensitive measurements of the buffer layer suggest the presence of S‐Zn and S‐O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large‐area solar cells.