Dual-Mode 3D X-ray Imaging for Failure Analysis of Complex Semiconductor Packages
作者
Jeff Gelb,Sheraz Gul,Chuyuan Zheng,Vikaram Singh,Anasuya Adibhatla,S. H. Lau,Sylvia Lewis,Wenbing Yun
出处
期刊:Proceedings日期:2025-11-07卷期号:85212: 335-342
标识
DOI:10.31399/asm.cp.istfa2025p0335
摘要
Abstract As semiconductor packaging technologies evolve toward increasingly complex architectures, such as wafer-level packaging, 2.5D/3D integration, and hybrid bonding, traditional 2D inspection tools are often inadequate for detecting buried defects like voids, delamination, and misalignment. In response, 3D X-ray imaging has gained widespread adoption in failure analysis (FA) workflows for its ability to non-destructively visualize internal structures at high resolution. However, conventional microtomography (CT) systems face limitations in inspecting large or planar samples efficiently, often requiring trade-offs between resolution, field of view, and scan time. Computed laminography (CL) offers an alternative for large, flat samples but is traditionally constrained to fixed geometries. This work introduces a dual-mode 3D X-ray approach that integrates both CT and a high-precision laminography technique, enabling flexible, submicron-resolution imaging across a wide range of sample types. The hybrid system architecture reduces laminographic artifacts, improves visualization of vertical features such as TSVs and hybrid bonds, and supports faster, more reliable defect detection. These capabilities significantly enhance FA productivity by providing both package-scale coverage and nanoscale insight in a single tool.