A circuit simulation model for resistive random-access memory devices based on CsBi3I10 perovskite thin films

This article proposes a circuit simulation model that can simulate the electrical behaviors of resistive random-access memory (RRAM) devices based on CsBi3I10 perovskite active layer. The CsBi3I10 perovskite thin films were fabricated using a sol-gel method and the structural properties were obtained with x-ray diffraction and scanning electron microscope analysis. The resistive switching memory behaviors of the RRAM devices were studied, showing that the resistance states can be well maintained for a duration of 104 s as well as in 2500 repeated Set/Reset operations during electrical measurements. To simulate the resistive switching behavior, a circuit simulation model was developed. The simulation results yielded good fitting to the experimental results, suggesting promising applications of the proposed model in this work for various kinds of RRAM devices.