Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions

. The combined action of these two effects gives rise to the much stronger increase of the series resistance of the HJ diodes compared to Schottky diodes. The observed differences between the radiation response of the HJs and SDs cannot be credibly attributed to the changes of the density of any of the deep electron and hole traps detected in our experiments.