Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation
材料科学
凝聚态物理
光电子学
工程物理
物理
作者
A. Kostopoulos,A. Adikimenakis,K. Tsagaraki,M. Kayambaki,N. Kornilios,George Konstantinidis,A. Georgakilas