Modulation of BiFeO3 nanoisland based ferroelectric tunnel junctions by engineering the barrier layer

Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation memory due to their low power consumption, high storage density, and non-volatile readout capabilities. However, achieving high performance in FTJs remains a challenge in nanoscale devices. Based on self-assembled BiFeO 3 ferroelectric nanoislands, we propose a novel FTJ structure by employing ferroelectric nanostructures and additional assisted barrier layers (La[Formula: see text]Sr[Formula: see text]MnO[Formula: see text] to optimize the device characteristics. We fabricated nanostructured BiFeO 3 /La[Formula: see text]Sr[Formula: see text]MnO 3 and La[Formula: see text]Sr[Formula: see text]MnO 3 /BiFeO 3 /La[Formula: see text]Sr[Formula: see text]MnO 3 FTJs using pulsed laser deposition. The piezoelectric response and coercive voltage were effectively modulated by altering the ferroelectric nanoisland thickness and introducing assisted barrier layers, while the polarization switching process was significantly affected and the resistive switching behavior was largely enhanced by one to two orders of magnitude. These findings provide insights into optimizing FTJ structures for advanced non-volatile memory devices, emphasizing the role of assisted barrier layers in improving device functionality.