Van der Waals Contact Induced Defect States‐Free Interface for Boosting Electroluminescence in 2D Semiconductor Light Emitting Device

Abstract Efficient carrier injection is crucial for the performance of transition metal dichalcogenide (TMDC)‐based light‐emitting devices. This work investigates the electroluminescent (EL) performance of TMDC devices using two metal contact strategies: direct Ti/Ag and van der Waals (vdW) Sb/Ag contacts. The vdW Sb/Ag contact significantly outperforms the direct Ti/Ag contact, achieving a 173.92% increase in EL intensity and enhanced carrier mobility. This improvement is attributed to the formation of crystalline antimonene at the metal‐semiconductor interface, which lowers the Schottky Barrier Height (SBH) and facilitates efficient carrier injection. Arrhenius analysis reveals an SBH of 0.86 eV for the Ti/Ag contact, while the vdW Sb/Ag contact reduces it to 0.45 eV. The reduced SBH, combined with a lower density of interface states, results in better current injection and improved overall device performance. The enhanced optoelectronic characteristics achieved with the vdW contact highlight its potential for optimizing TMDC‐based EL devices. These findings provide valuable insights into the development of high‐performance 2D material‐based light emitters and demonstrate the advantages of vdW contacts for future optoelectronic applications, offering a promising pathway to improve the efficiency and functionality of TMDC devices.