Journey of the 2D Intrinsic Antiferromagnetic Topological Insulators in the (MnBi2Te4)(Bi2Te3)n Homologous Series

Abstract In recent years, the study of two‐dimensional (2D) intrinsic antiferromagnetic (AFM) topological insulators (TIs) has attracted considerable attention due to their unique electronic and magnetic properties, which are promising for the advancement of quantum computing and spintronic applications. MnBi 2 Te 4 , recognized as the first intrinsic AFM TI, provides a unique platform for examining theoretical predictions in the field of quantum materials. This discovery has sparked extensive research and led to numerous new insights that have improved the understanding of the interplay between magnetism and topology in two‐dimensional systems. The homologous series (MnBi 2 Te 4 )(Bi 2 Te 3 ) n , with its alternating layers of MnBi 2 Te 4 and Bi 2 Te 3 , exhibits tunable magnetic and topological properties, making it a subject of intense investigation. This review comprehensively examines advances in the (MnBi 2 Te 4 )(Bi 2 Te 3 ) n homologous series, including their synthesis, structural characterization, and study of magnetic and electronic properties. Key experimental observations are highlighted, which have been instrumental in elucidating the fundamental physics of these materials. Additionally, several unresolved questions and potential future research directions are discussed, providing valuable insights for researchers seeking to advance this integrated field. This review serves as a reference for understanding the potential and future advancements of 2D AFM TIs, fostering further exploration of their complex and promising properties.