光致发光
材料科学
光电子学
钝化
钙钛矿(结构)
纳米晶
激发
半导体
声子
光子能量
卤化物
光子
纳米技术
光学
化学
无机化学
结晶学
物理
凝聚态物理
图层(电子)
量子力学
作者
Nikolay Pokryshkin,В. Н. Манцевич,V. Yu. Timoshenko
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2023-06-09
卷期号:13 (12): 1833-1833
被引量:10
摘要
Anti-Stokes photoluminescence (ASPL) is an up-conversion phonon-assisted process of radiative recombination of photoexcited charge carriers when the ASPL photon energy is above the excitation one. This process can be very efficient in nanocrystals (NCs) of metalorganic and inorganic semiconductors with perovskite (Pe) crystal structure. In this review, we present an analysis of the basic mechanisms of ASPL and discuss its efficiency depending on the size distribution and surface passivation of Pe-NCs as well as the optical excitation energy and temperature. When the ASPL process is sufficiently efficient, it can result in an escape of most of the optical excitation together with the phonon energy from the Pe-NCs. It can be used in optical fully solid-state cooling or optical refrigeration.
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