Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent Photoconductivity Application in Optical Memory

材料科学 光电子学 光电二极管 光电导性 电解质 电压 聚合物 纳米技术 电气工程 电极 化学 工程类 物理化学 复合材料
作者
Jun Sun,Jingzan Jiang,Yadan Deng,Yunuan Wang,Ling Li,Zhidong Lou,Yanbing Hou,Feng Teng,Yufeng Hu
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:14 (51): 57082-57091 被引量:4
标识
DOI:10.1021/acsami.2c17737
摘要

Organic phototransistors (OPTs) based on polymers have attracted substantial attention due to their excellent signal amplification, significant noise reduction, and solution process. Recently, the near-infrared (NIR) detection becomes urgent for OPTs with the increased demand for biomedicine, medical diagnostics, and health monitoring. To achieve this goal, a low working voltage of the OPTs is highly desirable. Therefore, the traditional dielectric gate can be replaced by an electrolyte gate to form electrolyte-gated organic phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 V but also are biocompatible. PCDTPT, one of the most popular narrow band gap donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity of 7.08 × 1011 Jones and the photoresponsivity of 3.56 A/W at a low operating voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon was also observed when the device was exposed to air. The PPC characteristic of the EGOPT in air has been used to achieve a phototransistor memory, and the gate bias can directly eliminate the PPC as an erasing operation. This work reveals the underlying mechanism of the electrolyte-gated organic phototransistor memories and broadens the application of the EGOPTs.
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