Computational exploration of magnesium-decorated carbon nitride (g-C3N4) monolayer as advanced energy storage materials

氢气储存 单层 吸附 范德瓦尔斯力 密度泛函理论 分子 氮化碳 氢原子 材料科学 化学 化学物理 计算化学 无机化学 物理化学 纳米技术 有机化学 烷基 光催化 催化作用
作者
Peng Gao,Ji-wen Li,Jie Zhang,Guangzhao Wang
出处
期刊:International Journal of Hydrogen Energy [Elsevier BV]
卷期号:46 (42): 21739-21747 被引量:57
标识
DOI:10.1016/j.ijhydene.2021.04.049
摘要

Density functional theory (DFT) computational studies were conducted to explore the hydrogen storage performance of a monolayer material that is built on the base of carbon nitride (g-C 3 N 4 , heptazine structure) with decoration by magnesium (Mg). We found that a 2 × 2 supercell can bind with four Mg atoms. The electronic charges of Mg atoms were transferred to the g-C 3 N 4 monolayer, and thus a partial electropositivity on each adsorbed Mg atom was formed, indicating a potential improvement in conductivity. This subsequently causes the hydrogen molecules’ polarization, so that these hydrogen molecules can be efficiently adsorbed via both van der Waals and electrostatic interactions. To note, the configurations of the adsorbed hydrogen molecules were also elucidated, and we found that most adsorbed hydrogen molecules tend to be vertical to the sheet plane. Such a phenomenon is due to the electronic potential distribution. In average, each adsorbed Mg atom can adsorb 1–9 hydrogen molecules with adsorption energies that are ranged from −0.25 eV to −0.1 eV. Moreover, we realised that the nitrogen atom can also serve as an active site for hydrogen adsorption. The hydrogen storage capacity of this Mg-decorated g-C 3 N 4 is close to 7.96 wt %, which is much higher than the target value of 5.5 wt % proposed by the U.S. department of energy (DOE) in 2020 [1]. The finding in this study indicates a promising carbon-based material for energy storage, and in the future, we hope to develop more advanced materials along this direction. • Metal Mg was applied to decorate monolayer g-C 3 N 4 . • The Mg-decorated g-C 3 N 4 performs well in hydrogen storage. • Binding structure of this material was solved via DFT calculations.
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