Semi-insulating current blocking property simulations for buried heterostructure laser diodes

A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi-insulating InP layers is more than 3×1015 cm−3 and less than 1×1016 cm−3. This simulator will be a useful tool in predicting the semi-insulating properties of electrical and optical semiconductor devices.