锭
扫描电子显微镜
碲
电阻率和电导率
吸收(声学)
化学计量学
分析化学(期刊)
晶体生长
材料科学
化学
矿物学
结晶学
无机化学
冶金
物理化学
复合材料
色谱法
物理
合金
量子力学
作者
C. Reig,V. Muñoz‐Sanjosé,C. Gómez,Ch. Ferrer,A. Segura
标识
DOI:10.1016/s0022-0248(01)00668-6
摘要
We report on the low temperature growth of MnTe crystals by means of travelling solution methods. Two different processes are considered; a classical THM process using a low temperature presynthesised MnTe ingot, and a modified THM process, in which an increasing length of solvent zone collects the tellurium that was added to the stoichiometric charge to decrease the reaction temperature. Ingots from the two methods are analysed by means of scanning electron microscopy, X-ray diffractometry, resistivity, susceptibility and optical absorption measurements.
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