Superlattice, graded band gap, channeling and staircase avalanche photodiodes towards a solid-state photomultiplier
作者
F. Capasso,W. T. Tsang
标识
DOI:10.1109/iedm.1982.190288
摘要
Recent results on a new class of low excess noise avalanche photodiodes (APDs) are discussed. A significant enhancement of the ionization rates ratio has been demonstrated in AlGaAs/GaAs superlattice and graded gap APDs. In addition two novel APDs where only electrons multiply (channeling and staircase APDs) have been disclosed. The staircase APD has lower bias voltage (5-10V) than conventional APDs and virtually noise-free multiplication similarly to a phototube.