Breakdown voltage in LDMOS transistors using internal field rings

The optimization of the floating-ring parameters and the breakdown voltage of a lateral DMOS (LDMOS) transistor using a single floating ring is presented. A first-order analytical approach is presented, showing the upper limit of the position of the ring, with respect to the channel, and the doping concentration within the ring to increase the breakdown voltage. A 2D numerical calculation of the breakdown voltage and on-resistance of the LDMOS transistor is also presented. The results, which support the analytical approach, allow the use of simple design rules for the implementation of high-voltage LDMOS transistors on a thick epitaxial layer. It is shown that improvements of breakdown voltage is obtained if the distance between the channel and the field ring is equal to the field plate length and the doping concentration in the ring satisfies a specific relationship. With a single ring, the breakdown voltage increases from 170 to 280 V for the same device area and to over 480 V if the area is allowed to increase by 25%.>