光电流
二硫化钼
纳米片
光电探测器
材料科学
光电子学
时间常数
偏压
钼
纳米技术
电压
物理
电气工程
量子力学
工程类
冶金
作者
Vijith K. Pulikodan,Akhil Alexander,B. Anitha,Manoj A. G. Namboothiry
标识
DOI:10.1021/acsanm.0c02058
摘要
Molybdenum disulfide (MoS2) is an emerging two-dimensional (2D) material for next-generation optoelectronic and energy storage devices. Although various efforts have been made to understand the photocurrent generation mechanisms and to improve the photoresponse behavior of 2D MoS2 nanosheets (NSs), little is understood about the mechanisms underlying the photocurrent response of few-layer MoS2 NSs, particularly the fast response of photocurrent followed by a slow rise under pulsed illumination. In this work, we have investigated the mechanisms behind the photoresponse of few-layer MoS2 NS-based two-terminal devices via time-resolved photocurrent measurements. The photoresponse of such devices under different bias voltages and light intensities is measured and the photocurrent initially shows a fast response in the time scale of ∼95 μs followed by a slow-rise current (SRC) with a rise-time constant of ∼50 s. The photocurrent increases sublinearly with intensity and exponentially with temperature, indicating the presence of traps. This work reports a systematic study of the photocurrent and SRC in few-layer MoS2 NSs and concludes that the SRC effects can be ascribed to the photobolometric and trap-assisted photogating processes. Besides, this study points out a correlation of the SRC in MoS2 with the temperature and vacuum level.
科研通智能强力驱动
Strongly Powered by AbleSci AI