钝化
材料科学
钙钛矿(结构)
结晶
成核
化学工程
能量转换效率
离子键合
晶体生长
Crystal(编程语言)
过氧化氢
乙二胺
无机化学
螯合作用
氢键
微晶
离子半径
异质结
纳米技术
晶体结构
羧酸盐
正交晶系
结晶度
光电子学
作者
Md. Abdul Karim,Shamim Ahmmed,Siliang Cao,Md. Emrul Kayesh,Yulu He,Md. Ataur Rahman,Wasif Islam Chowdhury,Masatoshi Yanagida,Yasuhiro Shirai,Ashraful Islam
出处
期刊:Small
[Wiley]
日期:2026-03-18
卷期号:: e00050-e00050
标识
DOI:10.1002/smll.202600050
摘要
Tin-lead (Sn-Pb) perovskite (TLP) serve as potential narrow-bandgap absorbers for photovoltaics; unfortunately, issues such as uncontrolled crystallization, Sn2+ oxidation, and interfacial defects continue to limit device efficiency and stability. In this study, we present a chelating coordination strategy at buried and top perovskite interface utilizing ethylenediamine diacetate (EDDA) to synergistically regulate perovskite crystallization and defect passivation in TLP. Post-treatment of PEDOT:PSS using EDDA mitigates surface acidity and reduces insulating PSS-rich domains through ionic exchange, thereby shifting the buried interface potential. The carboxylate (─COO-) groups of EDDA coordinate with undercoordinated Pb2+/Sn2+ cations, while the ─NH3 + groups form hydrogen bonds in TLP. These interactions at buried interface reduce nucleation concentration and promote homogeneous and orderly (100)-facet crystal growth across TLP films. The chemical polishing of the TLP top surface inhibits the Sn2+ oxidation, reduces defects and facilitates more efficient charge extraction. As a result, the Target devices demonstrate a power conversion efficiency (PCE) of 23.30% (0.09 cm2), with an enhanced open-circuit voltage of 0.877 V and a fill factor of 81.81%. Importantly, the Target device shows high stability for 300 s under continuous sunlight at maximum power point tracking and maintains 90% efficiency after 1800 h of storage in N2.
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